1. 個人簡介
蔣華平，男，1982年生，博士，“百人計劃”特聘研究員，博士生導師。從事電力電子器件及其應用技術研究18年，其中碳化硅電力電子10余年：中國中車2年、英國丹尼克斯（Dynex Semiconductor Ltd）4年、英國華威大學（University of Warwick）2年、重慶大學5年。兼備學術研究和產品研發，貫通電力電子和功率半導體芯片。重慶大學教學與科研期間，著力于高速發展的國際前沿領域——碳化硅電力電子，契合國家雙碳和新能源戰略。打造《功率微電子學》等課程，破除芯片與電路間壁壘，將芯片、封裝、測試和應用融為一體。所培養的復合型人才，多人在中國華為、中電集團、英國華威大學、懷柔國家實驗室等國內外一流企事業單位居于核心崗位，為中國乃至世界碳化硅電力電子的發展做出突破性貢獻。
在IEEE Trans. Power Electronics、IEEE Electron Device Letter、IEEE Trans. Electron Devices等頂級期刊和ISPSD等頂級會議上，發表學術論文共計70余篇，其中期刊論文40余篇、會議論文30余篇。中國發明專利30余項，其中已授權26項，英國發明專利2項。牽頭制定第三代半導體聯盟團體標準1項，參與制定美國JEDEC標準1項。
長期專注于SiC功率半導體芯片、封裝以及應用技術研究。在SiC芯片方面，研究閾值穩定性、雙極退化等可靠性物理機理，提出新型芯片結構、開發芯片測試和篩選技術。在SiC封裝方面，研究雪崩、過載等復雜應力下老化失效機理，提出相變模塊等高沖擊應力耐受能力的新型封裝結構。在SiC器件應用方面，研究并聯分流機制，提出新型測評技術、柵極驅動方法、在線監測方法和控制策略。
在碳化硅MOSFET閾值動態漂移研究處于國際領先水平，揭示了柵極應力極性對觸發動態漂移的決定性作用，給出了應力極性的定義，提出了局域電場增強模型，為揭示其物理機理指明了方向。研究成果被德國Infineon公司在其國際專利、學術論文和JEDEC標準中引用不少于7次。在碳化硅MOSFET閾值穩定性方面系統且深入的研究，最早于國際頂級期刊IEEE Electron Device Letter上報道，得到德國Infineon、美國泰克和中國華為等國際一流公司高度認可和/或合作邀請。提出非對稱MMC子模塊，首次于國際頂級期刊IEEE Trans. Power Electronics報道，獲得南方電網高度認可。
2001-09 至 2012-12, 電子科技大學, 微電子學, 學士/碩士/博士
2013-03 至 2018-05, 株洲中車時代電氣股份有限公司，SiC研發工程師
2014-07 至 2018-05, 英國丹尼克斯公司（Dynex Semiconductor Ltd.），SiC研發工程師
2016-02 至 2018-02, 英國華威大學（University of Warwick），訪問學者
2018-08 起, 重慶大學, 研究員
2. 研究方向
碳化硅屬于寬禁帶半導體，其臨界擊穿電場比硅高出約一個量級。這就使得基于碳化硅制作的MOSFET的電壓電流等級，可延伸覆蓋硅基IGBT的電壓電流等級。用單極型的MOSFET與雙極型的IGBT競爭，在開關損耗方面具有降維打擊效果。然而，碳化硅MOSFET存在動態閾值漂移等長期可靠性問題，導致特斯拉電動汽車召回事件，這正是如下實驗室研究方向的起源。
研究方向（一）：碳化硅MOSFET長期可靠性
車規碳化硅MOSFET閾值穩定性、dv/dt耐受以及雙極退化等可靠性物理機理、測試與評估方法、芯片與封裝新結構、柵極驅動方法以及可靠性提升方法。
研究方向（二）：碳化硅MOSFET在電力電子中的應用
電動汽車等典型應用中，碳化硅MOSFET多芯片并聯分流演化規律與機制、在線或原位監測方法、壽命評估方法與模型、控制策略與方法。
碳化硅電力電子是國家雙碳和新能源戰略的重要支點之一，屬于典型卡脖子技術，是科技戰主戰場。相比于傳統基于 IGBT 電力電子芯片，碳化硅電力電子芯片及其器件在小型、輕量和高效等方面具有碾壓性優勢，屬于未來 30 年國際熱門方向，急缺高層次、綜合性人才。代表性應用領域是電動汽車（含充電樁）、光伏發電、直流和柔性直流輸電。碳化硅電力電子方向橫跨芯片、封裝、測試和電路，畢業后知識面廣而深，無論是從事電力電子裝備開發還是功率半導體芯片設計制造，都具有技術和產業人才緊缺、迫切的需要。
歡迎電氣工程、集成電路和物理學等學科/方向的學生報考博士或碩士研究生。
3. 項目情況
[1] SiC MOS閾值穩定性研究技術合作項目，184萬，橫向，主持
[2] SiC功率器件研究，468萬，橫向，主持
[3] 功率器件光伏逆變工況模擬系統開發項目，250萬，橫向，主持
[4] 碳化硅功率MOSFET閾值電壓動態漂移測評服務項目，70萬，橫向，主持
[5] 柔直功率器件老化失效機理與表征方法研究，220萬，橫向，主持
[6] 碳化硅功率MOSFET閾值電壓動態漂移測評技術開發項目，30萬，橫向，主持
[7] 先進車規級碳化硅功率MOSFET技術研發項目，12萬，橫向，主持
[8] 4500V溝槽型IGBT芯片高端技術研究，20萬，橫向，主持
[9] 基于數字孿生的含高滲透率新能源的重慶交直流混聯系統仿真建模與平臺研究，15萬，橫向，主持
[10] 新一代新能源汽車深度集成度電驅動系統關鍵技術研究與應用，30萬，縱向，主持
[11] 機械式高壓直流斷路器檢測與評估技術深化研究，75萬，橫向，主持
[12] 功率器件測試系統研發服務項目，30萬，橫向，主持
[13] 現代功率半導體器件測試與評估技術研發合作項目，39萬，橫向，主持
4. 實驗條件
實驗室依托重慶大學“輸變電裝備技術全國重點實驗室”，以及與英國華威大學（University of Warwick）合作成立“中英碳化硅電力電子聯合實驗室”，擁有實驗場地400平米，具備完整的研究開發碳化硅電力電子技術所需的軟硬件條件。
軟件方面，已購買TCAD仿真工具——瑞士Synopsys公司旗下Sentaurus軟件包許可，用于SiC芯片設計與仿真；采用SolidWorks、Q3D和COMSOL進行SiC封裝建模與模擬；擁有MATLAB/Simulink開展電力電子系統模擬與分析。
硬件方面，配備有Agilent B1505A以及Tektronix 371B功率器件分析儀/曲線追蹤儀可以測試模塊和器件的開關、正向導通及反向阻斷特性；固緯LCR8110G高精度LCR測試儀用于測量芯片和模塊的寄生參數；高精度數字示波器Tektronix MSO44 4-BW-1000（1GHz）、高精度紅外熱成像儀Flir E54（最高溫度650℃）、可編程大功率直流電源IT6006D-800-25（800V/25A）、溫度/濕度/振動三綜合試驗箱CH500CVTH（溫度-70℃~200℃，濕度10%~95%，振動0.1Hz~10kHz）等設備和儀器共50余臺/套；搭建的MMC子模塊老化與在線監控平臺、永磁同步電機對拖平臺和光伏并網系統用于功率器件老化工況；自研的碳化硅MOSFET閾值穩定性測試裝備用于研究開關應力下閾值動態漂移機理。
5. 專利（時間倒序）
[1] 蔣華平,廖瑞金,肖念磊. 一種漏極應力下器件穩定性測試電路（測量）.（申請中）
[2] 蔣華平,廖瑞金,肖念磊. 一種漏極應力下器件穩定性測試電路（解耦）.（申請中）
[3] 蔣華平,廖瑞金,湯磊.一種抑制并聯器件閾值分散性增加的篩選匹配方法: CN117316799A [P],2023.（實審）
[4] 蔣華平,廖瑞金,趙柯.一種防止溫漂的MOS器件柵極驅動方法及驅動電路: CN117200770A [P],2023.（實審）
[5] 蔣華平,廖瑞金,胡浩偉,肖念磊.一種用于功率器件的 dv/dt 耐受能力測試電路及方法: CN116840648A [P],2023.（實審）
[6] 蔣華平,廖瑞金,鐘笑寒,謝宇庭,湯磊,趙柯,肖念磊. 多工作模式電路的控制裝置及其控制方法: CN116743138A [P],2023. （授權）
[7] 蔣華平,廖瑞金,戚曉偉,鐘笑寒,湯磊,趙柯,肖念磊. 絕緣柵型半導體器件的閾值電壓恢復方法及相關產品: CN116743134A [P],2023. （授權）
[8] 蔣華平,廖瑞金,戚曉偉. MOS型半導體器件的閾值電壓穩定性測試方法、測試設備:CN116203370 A[P],2023. （實審）
[9] 蔣華平,廖瑞金,趙柯. MOS 型半導體器件的柵極驅動電路和電力變換裝置:CN 116436450A [P],2023. （授權）
[10] 蔣華平,廖瑞金,肖念磊. MOS型半導體器件閾值電壓穩定測試方法和系統:CN 116359695A [P],2023. （授權）
[11] 蔣華平,廖瑞金,湯磊. MOS型半導體器件測試設備:CN 116520114A [P],2023. （實審）
[12] 蔣華平,廖瑞金,胡浩偉,鐘笑寒,湯磊,肖念磊,趙柯.一種通過調節柵極電壓提高功率器件過載的柵極驅動電路:CN 116366044A [P],2023. （授權）
[13] 蔣華平,廖瑞金,胡浩偉,鐘笑寒,湯磊,肖念磊,趙柯.一種通過降低柵極電阻提高功率器件過載的柵極驅動電路:CN 116317480A [P],2023. （實審）
[14] 蔣華平,廖瑞金,謝宇庭,鐘笑寒,湯磊,趙柯,肖念磊.導通壓降檢測電路、設備和電力變換裝置:CN 116718884A [P],2023. （實審）
[15] 蔣華平,廖瑞金,肖念磊. MOS 型半導體器件的閾值電壓穩定性測試方法、測試設備:CN 116068354A[P],2022. （授權）
[16] 蔣華平,廖瑞金,黃詣涵.MOS 型半導體器件的閾值電壓穩定性測試電路: CN116224003A[P],2022. （授權）
[17] 蔣華平,冉立,廖瑞金,魏鏡楓.一種基于襯底凹槽設計的高過載能力功率模塊:CN 116230659A [P],2022. （實審）
[18] 蔣華平,冉立,廖瑞金,魏鏡楓.一種基于芯片頂部金屬塊設計的高過載能力功率模塊:CN 115863279A [P],2022. （實審）
[19] 蔣華平,吳澤兵,許超,劉立,冉立.一種基于器件開關電壓變化率直接檢測的動態調控電路及方法:CN115021739A[P],2022. （實審）
[20] 蔣華平,許超,吳澤兵,劉立,戚曉偉.一種抑制過沖尖峰的SiC MOSFET驅動電路:CN115173676A[P],2022. （實審）
[21] 毛婳,蔣華平,冉立等.功率半導體結構及斷路器轉移支路組件:CN112968007A[P],2021. （授權）
[22] 任海,冉立,劉立,蔣華平.一種壓接型功率半導體結構及其內部壓力在線測量方法:CN113834527A[P],2021. （實審）
[23] 任海,冉立,蔣華平,劉立,王小勇.壓接型功率半導體模塊結構及其子單元和制作方法:CN113066785A[P],2021. （實審）
[24] 劉立,冉立,蔣華平,王小勇.一種基于光纖光柵傳感器的IGBT結溫監測系統:CN112731095B[P],2020. （授權）
[25] 周敬森,魏金蕭,謝剛文,冉立,張友強,蔣華平等.基于數字孿生技術的交直流混合電網全域實時模擬方法:CN112531694B[P],2020. （授權）
[26] 劉立,冉立,蔣華平,王小勇.基于光纖光柵傳感器的電動汽車IGBT健康監測系統:CN112578255B[P],2020. （授權）
[27] 蔣華平,冉立.功率半導體模塊結構:CN110379787A[P],2019.（失效）
[28] 高云斌,李誠瞻,趙艷黎,陳喜明,蔣華平等.碳化硅MOSFET器件及其制備方法:CN107275393A[P],2017. （失效）
[29] 趙艷黎,李誠瞻,高云斌,蔣華平等.一種溝槽柵碳化硅MOSFET器件及其制造方法:CN109698237A[P],2017.（實審）
[30] 陳萬軍,李震洋,蔣華平等.一種逆導型MOS柵控晶閘管及其制作方法:CN105679819B[P],2016.（授權）
[31] 鄭昌偉,蔣華平,戴小平.短溝道半導體功率器件及其制備方法:CN107799592B[P],2016. （授權）
[32] H. Jiang, M. Ke, I. Deviny and J. Wei. A power MOSFET with an integrated Schottky diode:GB2569497B[P],2016.（PCT有效期滿）
[33] H. Jiang, M. Ke, I. Deviny and J. Wei. A SiC trench transistor:GB2548126A[P],2016. （PCT有效期滿）
[34] 趙艷黎,劉可安,李誠瞻,高云斌,蔣華平等.一種碳化硅MOS器件及其制造方法:CN104282765B[P],2015.（授權）
[35] 李誠瞻,吳煜東,趙艷黎,蔣華平等.一種新型碳化硅MOSFET及其制造方法:CN104282766A[P],2015.（失效）
[36] 趙艷黎,劉國友,李誠瞻,高云斌,蔣華平等.一種新型碳化硅MOSFET及其制造方法:CN104319292A[P],2015.
[37] 吳佳,吳煜東,劉可安,李誠瞻,史晶晶,蔣華平等.半導體器件耐壓終端結構及其應用于SiC器件的制造方法:CN104882357A[P],2015.（失效）
[38] 李誠瞻,劉可安,吳煜東,楊勇雄,史晶晶,蔣華平等.肖特基勢壘二極管及其制造方法:CN104576762B[P],2015.（授權）
[39] 蔣華平,戴小平,鄭昌偉.一種功率半導體器件及其制作方法:CN105514155A[P],2015.（實審）
[40] 蔣華平,劉可安,吳煜東等.一種碳化硅功率器件結終端的制造方法:CN103824760B[P],2014.（授權）
[41] 李誠瞻,吳煜東,劉可安,周正東,史晶晶,楊勇雄,吳佳,蔣華平等.一種大電流碳化硅SBD/JBS功率芯片結構及其制造方法：CN103579016B[P],2014.（授權）
[42] 蔣華平,劉可安,吳煜東,李誠瞻,趙艷黎,吳佳,唐龍谷.一種功率器件結終端結構與制造方法:CN103824879B[P],2014.（授權）
[43] 楊勇雄,吳煜東,何多昌,蔣華平等.一種碳化硅功率器件結終端結構及其制造方法:CN103824878B[P],2014.（授權）
[44] 陳萬軍,蔣華平,章晉漢,張波.一種無snapback效應的逆導型絕緣柵雙極晶體管:CN103022089A[P],2012.（實審）
6. 期刊論文（時間倒序）
[1] X. Zhong, C. Xu, H. Jiang, R. Liao, L. Tang, Y. Huang, K. Zhao, Ni. Xiao, X. Qi, L. Liu and Q. Zhang, "Recovery Performance of the Dynamic Threshold Voltage Drift of Silicon Carbide MOSFETs," in IEEE Transactions on Power Electronics, vol. 39, no. 6, pp. 7620-7631, June 2024.（一區）
[2] L. Tang, H. Jiang*, R. Liao, X. Zhong, K. Zhao, N. Xiao and Y. Huang, "Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift," in IEEE Transactions on Electron Devices, vol. 71, no. 4, pp. 2342-2348, April 2024. （二區）
[3] L. Tang, H. Jiang*, R. Liao, Y. Huang, X. Zhong, X. Qi, L. Liu and Q. Zhang, "Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETS," in IEEE Transactions on Power Electronics, vol. 39, no. 5, pp. 6312-6326, May 2024.（一區）
[4] L. Liu, L. Tang, H. Jiang*, F. Wei, Z. Li, C. Du, Q. Peng and G. Lu, "A study on reliability evaluation of IGBT power module on electric vehicle using big data," in Journal of Semiconductors, (Accept).
[5] J. Wei, H. Jiang*, N. Xiao, Z. Wu, L. Wang and L. Ran, "Multiple Phase Change Materials Integrated into Power Module for Normal and High Current Reliability Enhancement," in IEEE Transactions On Device and Materials Reliability, vol. 23, no. 1, pp. 127-133, March 2023.
[6] H. Mao, H. Jiang*, L. Ran, J. Hu, G. Qiu, J. Wei, H. Chen, X. Zhong, N. Xiao, L. Wang and M. Yang, "An Asymmetrical Power Module Design for Modular Multilevel Converter With Unidirectional Power Flow," in IEEE Transactions on Power Electronics, vol. 38, no. 1, pp. 1092-1103, Jan. 2023.（一區）
[7] L. Tang, H. Jiang*, X. Zhong, G. Qiu, H. Mao, X. Jiang, X. Qi, C. Du, Q. Peng, L. Liu and L. Ran, "Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET," in IEEE Transactions on Power Electronics, vol. 38, no. 1, pp. 1155-1165, Jan. 2023. （一區）
[8] H. Jiang*, X. Qi, G. Qiu, X. Zhong, L. Tang, H. Mao, Z. Wu, H. Chen and L. Ran, "A Physical Explanation of Threshold Voltage Drift of SiC MOSFET Induced by Gate Switching," in IEEE Transactions on Power Electronics, vol. 37, no. 8, pp. 8830-8834, Aug. 2022. （一區）
[9] X. Zhong, H. Jiang*, L. Tang, X. Qi, P. Jiang and L. Ran, "Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs," in IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3328-3333, June 2022. （二區）
[10] X. Zhong, H. Jiang*, G. Qiu, L. Tang, H. Mao, C. Xu, X. Jiang, J. Hu, X. Qi and L. Ran, "Bias Temperature Instability of Silicon Carbide Power MOSFET Under AC Gate Stresses," in IEEE Transactions on Power Electronics, vol. 37, no. 2, pp. 1998-2008, Feb. 2022. （一區）
[11] H. Mao, G. Qiu, X. Jiang, H. Jiang*, X. Zhong, L. Tang, Y. Zhang, L. Ran and Y. Wu, "Investigation on the Degradations of Parallel-Connected 4H-SiC MOSFETs Under Repetitive UIS Stresses," in IEEE Transactions on Electron Devices, vol. 69, no. 2, pp. 650-657, Feb. 2022. （二區）
[12] G. Qiu, L. Ran, H. Feng, H. Jiang*, T. Long, A. J. Forsyth, W. Shao and X. Hou, "A Fluxgate-Based Current Sensor for DC Bias Elimination in a Dual Active Bridge Converter," in IEEE Transactions on Power Electronics, vol. 37, no. 3, pp. 3233-3246, March 2022. （一區）
[13] Z. Wu, H. Jiang*, Z. Zheng, X. Qi, H. Mao, L. Liu and L. Ran, "Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range," in IEEE Transactions on Power Electronics, vol. 37, no. 6, pp. 6237-6241, June 2022. （一區）
[14] X. Jiang, H. Jiang*, X. Zhong, H. Mao, Z. Wu, L. Tang, H. Chen, J. Cheng and L. Ran, "Impact of Gate Resistance on Improving the Dynamic Overcurrent Stress of the Si/SiC Hybrid Switch," in IEEE Transactions on Power Electronics, vol. 37, no. 11, pp. 13319-13331, Nov. 2022. （一區）
[15] L. Tang, H. Jiang*, J. Wei, Q. Hu, X. Zhong and X. Qi, “A comparative study of SiC MOSFETs with and without integrated SBD,” in Microelectronics Journal, vol. 128, pp. 0026-2692, Oct. 2022.
[16] H. Ren*, L. Ran, X. Liu, L. Liu, S. Djurovi?, H. Jiang*, M. Barnes and P. A. Mawby, "Quasi-Distributed Temperature Detection of Press-Pack IGBT Power Module Using FBG Sensing," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 5, pp. 4981-4992, Oct. 2022. （二區）
[17] G. Qiu, L. Ran, H. Feng, H. Jiang, H. Mao and J. Wei, "A High-Precision Sensor Based on AC Flux Cancellation for DC Bias Detection in Dual Active Bridge Converters," in IEEE Transactions on Power Electronics, vol. 37, no. 11, pp. 13513-13524, Nov. 2022.（一區）
[18] J. Yang, Y. Che, L. Ran, M. Du, H. Jiang and M. Xiao, "Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs," in IEEE Transactions on Device and Materials Reliability, vol. 22, no. 1, pp. 26-35, March 2022.
[19] H. Jiang*, J. Wei, X. Fang, H. Ren, W. Shao and L. Ran, "A ?Tj Reduced Power Module With Inbuilt Phase Change Material for Reliability Enhancement," in IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4557-4564, Sept. 2021. （二區）
[20] B. Hu, Z. Hu, L. Ran, C. Ng, C. Jia, P. McKeever, P. J. Tavner, C. Zhang, H. Jiang and P. A. Mawby, "Heat-Flux-Based Condition Monitoring of Multichip Power Modules Using a Two-Stage Neural Network," in IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 7489-7500, July 2021. （一區）
[21] H. Ren, W. Shao, L. Ran, G. Hao, L. Zhou, P. Mawby and H. Jiang, "A Phase Change Material Integrated Press Pack Power Module With Enhanced Overcurrent Capability for Grid Support—A Study on FRD," in IEEE Transactions on Industry Applications, vol. 57, no. 4, pp. 3956-3968, July-Aug. 2021.
[22] L. Liu, C. Du, Q. Peng, J. Chen, Y. Wang, Y. Chen, Z. Peng, H. Jiang and L. Ran, "An investigation on IGBT junction temperature estimation using online regression method," in Microelectronics Reliability, vol. 124, pp. 0026-2714, Sept. 2021.
[23] H. Jiang*, X. Zhong, G. Qiu, L. Tang, X. Qi and L. Ran, "Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET," in IEEE Electron Device Letters, vol. 41, no. 9, pp. 1284-1287, Sept. 2020. （二區）
[24] J. Yang, Y. Che, L. Ran and H. Jiang, "Evaluation of Frequency and Temperature Dependence of Power Losses Difference in Parallel IGBTs," in IEEE Access, vol. 8, pp. 104074-104084, 2020.
[25] W. Shao, R. Wu, L. Ran, H. Jiang, P. A. Mawby, D. J. Rogers, T. C. Green, T. Coombs, K. Yardley, D. Kastha, P. Bajpai and L. Zhou, "A Power Module for Grid Inverter With In-Built Short-Circuit Fault Current Capability," in IEEE Transactions on Power Electronics, vol. 35, no. 10, pp. 10567-10579, Oct. 2020. （一區）
[26] M. Zhang, J. Wei, X. Zhou, H. Jiang, B. Li and K. J. Chen, "Simulation Study of a Power MOSFET With Built-in Channel Diode for Enhanced Reverse Recovery Performance," in IEEE Electron Device Letters, vol. 40, no. 1, pp. 79-82, Jan. 2019. （二區）
[27] J. Wei, M. Zhang, H. Jiang, X. Zhou, B. Li and K. J. Chen, "Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study," in IEEE Electron Device Letters, vol. 40, no. 7, pp. 1155-1158, July 2019. （二區）
[28] J. Wei, M. Zhang, H. Jiang, B. Li and K. J. Chen, "Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect," in IEEE Transactions on Electron Devices, vol. 66, no. 7, pp. 3034-3039, July 2019. （二區）
[29] W. Shao, X. Li, H. Jiang, X. Guo, Z. Zheng, L. Ran and P. Mawby, " Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode," in Materials Science Forum, vol. 963, pp. 873-877, July 2019.
[30] T. Dai, C. Chan, X. Deng, H. Jiang, P. Gammon, M. M.,Jennings and P. A. Mawby, "4H-SiC trench MOSFET with integrated fast recovery MPS diode," in Electronics Letters, vol. 54, no. 3, pp. 167-169, Feb. 2018.
[31] Y. Sharma, H. Jiang, C. Zheng, X. Dai, Y. Wang and I. Deviny, "Impact of design and process variation on the fabrication of SiC diodes," in Journal of Semiconductors, vol. 39, no. 11, pp. 25-30, Nov. 2018.
[32] Y.K Sharma, H. Jiang, C. Zheng, X. Dai and I. Deviny, "Effect of Design Variations and N2O Annealing on 1.7kV 4H-SiC Diodes," in Materials Science Forum, vol. 924, pp. 428-431, June 2018.
[33] J. Wei, M. Zhang, H. Jiang, H. Wang and K. J. Chen, "Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations," in IEEE Transactions on Electron Devices, vol. 64, no. 6, pp. 2592-2598, June 2017. （二區）
[34] M. Zhang, J. Wei, H. Jiang, K. J. Chen and C. H. Cheng, "A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance," in IEEE Transactions on Device and Materials Reliability, vol. 17, no. 2, pp. 432-437, June 2017.
[35] M. Zhang, J. Wei, H. Jiang, K. J. Chen and C. Cheng, "SiC trench MOSFET with self-biased p-shield for low RON-SP and low OFF-state oxide field," in IET Power Electronics, vol. 10, no. 10, pp. 1208-1213, June 2017.
[36] J. Wei, M. Zhang, H. Jiang, C. -H. Cheng and K. J. Chen, "Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges," in IEEE Electron Device Letters, vol. 37, no. 11, pp. 1458-1461, Nov. 2016. （二區）
[37] H. Jiang, J. Wei, X. Dai, M. Ke, I. Deviny and P. Mawby, "SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss," in IEEE Electron Device Letters, vol. 37, no. 10, pp. 1324-1327, Oct. 2016. （二區）
[38] J. Wei, H. Jiang, Q. Jiang and K. J. Chen, "Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications," in IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2469-2473, June 2016. （二區）
[39] H. Jiang, M. Ke, Y. Sharma, X. Dai, I. Deviny and C. Zheng, "Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization," in Materials Science Forum, vol. 858, pp. 745-748, May 2016.
[40] X. Deng, C. Rao, J. Wei, H. Jiang, M. Chen, X. Wang and B. Zhang, "High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step," in Materials Science Forum, vol. 778-780, pp. 808-811, Feb. 2014.
[41] H. Jiang, B. Zhang, W. Chen, Z. Li, C. Liu, Z. Rao and B. Dong, "A Snapback Suppressed Reverse-Conducting IGBT With a Floating p-Region in Trench Collector," in IEEE Electron Device Letters, vol. 33, no. 3, pp. 417-419, March 2012, （一區）
[42] H. Jiang, J. Wei, B. Zhang, W. Chen, M. Qiao and Z. Li, "Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode," in IEEE Electron Device Letters, vol. 33, no. 12, pp. 1684-1686, Dec. 2012. （一區）
[43] H. Jiang, B. Zhang, C. Liu, W. Chen, Z. Rao and B. Dong, "Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to backside processes," in Journal of Semiconductors, vol. 33, no. 2, pp. 41-44, Feb. 2012.
[44] H. Jiang, W. Chen, C. Liu, Z. Rao, B. Dong and B. Zhang, "Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs," in Journal of Semiconductors, vol. 32, no. 12, pp. 72-75, Dec. 2011.
[45] J. Fang, H. Jiang, M. Qiao, B. Zhang and Z. Li, "A Static-State Model of NPT-IGBTs with Localized Lifetime Control," in Journal of Semiconductors, vol. 27, pp. 857-863, May 2006.
7. 會議論文（時間倒序）
[1] H. Mao, H. Jiang, L. Ran, H. Chen, Y. Xie and M. Yang, "Electrical and Thermal Performances of IGCT in High Voltage DC Circuit Breaker," 2022 2nd International Conference on Electrical Engineering and Control Science (IC2ECS).
[2] H. Mao, H. Jiang, G. Qiu, Y. Zhang, X. Zhong, H. Feng and L. Ran, "Single-Pulse Avalanche Failure Characterization of Single and Paralleled SiC MOSFETs," 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), pp. 467-471, 2021.
[3] X. Jiang, H. Jiang, H. Yu, J. Jiang, H. Feng, H. Mao, L. Tang, X. Zhong and L. Ran, "Impact of Gate Resistances on Switching-on Behaviors of Si/SiC Hybrid Switch," 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), pp. 478-482, 2021.
[4] L. Tang, H. Jiang, H. Mao, Z. Wu, X. Zhong, X. Qi and L. Ran, "The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET," 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), pp. 483-487, 2021.
[5] Z. Wu, H. Jiang, X. Qi, H. Mao, S. Niu, S. Niu, L. Tang and L. Ran, "A dv/dt Control Strategy of SiC MOSFET for Turn-off Loss Reduction within Entire Operational Power Range," 2021 IEEE International Conference on Electrical Engineering and Mechatronics Technology (ICEEMT), pp. 424-428, 2021.
[6] C. Xu, X. Zhong, H. Jiang, G. Qiu, L. Tang and L. Ran, "Impact of Duty Cycle and Junction Temperature on Dynamic Threshold Drift of SiC MOSFET," 2021 4th International Conference on Energy, Electrical and Power Engineering (CEEPE), pp. 347-350, 2021.
[7] J. Hu, G. Qiu, W. Wang, L. Ran, K. Ma and H. Jiang, "An On-line Capacitor Condition Monitoring Method Based on Switching Frequencies For Modular Multilevel Converters," 2021 4th International Conference on Energy, Electrical and Power Engineering (CEEPE), pp. 183-187, 2021.
[8] Z. Zheng, W. Shao, H. Jiang and L. Ran, "A Single-Phase Direct AC-AC Converter Using SiC Devices for Inherent Power Factor Correction Capability," 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), pp. 1344-1349, 2021.
[9] G. Qiu, L. Ran, H. Jiang, T. Long, A. Forsyth and W. Shao, "A Method for Detecting DC Bias in Transformer of Dual Active Bridge DC-DC Converter," 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), pp. 714-719, 2021.
[10] H. Mao, H. Jiang, J. Hu, L. Ran, Y. Wu, Z. Lv and D. Yang, "Asymmetrical Power Module for Modular Multilevel Converter with Lower Power Loss and Peak Junction Temperature," 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), pp. 644-649, 2021.
[11] X. Fang, H. Jiang, X. Wang, W. Shao, H. Ren, L. Ran and H. Mao, "Reliability Enhancement of Power Modules by Restricting Junction Temperature Fluctuation through Increased Transient Thermal Capacity," 2020 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 4024-4028, 2020.
[12] H. Ren, G. Hao, W. Shao, L. Ran, L. Zhou, P. Mawby and H. Jiang, "Thermal Buffering Effect of Phase Change Material on Press-pack IGBT during Power Pulse," 2019 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 4937-4943, 2019.
[13] W. Shao, R. Wu, L. Ran, H. Jiang, T. Coombs, K. Yardley, P. Mawby, D. Kastha and P. Bajpai, "Enhanced Over-current Capability and Extended SOA of Power Modules Utilizing Phase Change Material," 2019 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 5315-5320, 2019.
[14] J. Wei, M. Zhang, H. Jiang, B. Li, Z. Zheng and K. J. Chen, "Investigations of p-Shielded SiC Trench IGBT with Considerations on IE Effect, Oxide Protection and Dynamic Degradation," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 199-202, 2019.
[15] J. Wei, M. Zhang, H. Jiang, S. To, S. Kim, J. -Y. Kim and K. J. Chen, "SiC trench IGBT with diode-clamped p-shield for oxide protection and enhanced conductivity modulation," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 411-414, 2018.
[16] W. Shao, L. Ran, Z. Zeng, R. Wu, P. Mawby, H. Jiang, D. Kastha, P. Bajpai, "Power Module with Large Short Term Current Capability by Using Phase Change Material," 2018 14th IET International Conference on AC and DC Power Transmission (ACDC), pp. 3225-3229, 2018.
[17] W. Shao, L. Ran, Z. Zeng, R. Wu, P. Mawby, H. Jiang, D. Kastha and P. Bajpai, "Power Modules for Pulsed Power Applications Using Phase Change Material," 2018 Second International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM), pp. 1-6, 2018.
[18] X. Li, H. Jiang, B. Hu, H. Chen, Z. Zeng, L. Ran and P. Mawby, "Electro-Thermal Limited Switching Frequency for Parallel Diodes," 2018 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 4692-4698, 2018.
[19] H. Jiang, J. Wei, X. Dai, C. Zheng, M. Ke, X. Deng, Y. Sharma, I. Deviny and P. Mawby, "SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications," 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), pp. 49-52, 2017.
[20] J. Wei, Y. Wang, M. Zhang, H. Jiang and K. J. Chen, "High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture," 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), pp. 331-334, 2017.
[21] J. Wei, M. Zhang, H. Jiang, H. Wang and K. J. Chen, "Charge storage effect in SiC trench MOSFET with a floating p-shield and its impact on dynamic performances," 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), pp. 387-390, 2017.
[22] X. Dai, H. Jiang, C. Zheng and M. Ke, "SiC Power MOSFET with Monolithically Integrated Schottky Barrier Diode for Improved Switching Performances," PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, pp. 1-4, 2017.
[23] H. Jiang, J. Wei, X. Dai, M. Ke, C. Zheng and I. Deviny, "Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss," 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 59-62, 2016.
[24] J. Wei, H. Jiang, Q. Jiang and K. J. Chen, "Proposal of a novel GaN/SiC hybrid FET (HyFET) with enhanced performance for high-voltage switching applications," 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 99-102, 2016.
[25] M. Ke, D. Li, X. Dai, H. Jiang, I. Deviny, H. Luo and G. Liu, "Improved surge current capability of power diode with copper metallization and heavy copper wire bonding," 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), pp. 1-6, 2016.
[26] K. Mao, M. Qiao, L. Jiang, H. Jiang, Z. Li, W. Chen, Z. Li and B. Zhang, "A 0.35 μm 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOS," 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp. 397-400, 2013.
[27] W. Chen, J. Zhang, B. Zhang, H. Jiang and Z. Li, "The SuperJunction MOS-controlled thyristor (SJ-MCT) with low power loss for high-power switching applications," 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, pp. 1-3, 2012.
[28] H. Jiang, B. Zhang, W. Chen, C. Liu, Z. Rao and B. Dong, "A Snapback Suppressed Reverse Conducting IGBT with Oxide Trench Collector," 2012 Asia-Pacific Power and Energy Engineering Conference, pp. 1-4, 2012.
[29] H. Jiang, B. Zhang, W. Chen, Z. Li, C. Zheng, C. Liu, Z. Rao and B. Dong, "A simple method to design the single-mask multi-zone junction termination extension for high-voltage IGBT," 2012 24th International Symposium on Power Semiconductor Devices and ICs, pp. 173-176, 2012.
[30] M. Qiao, Y. He, H. Wen, X. Zhou, L. Jiang, H. Jiang, X. Luo, Z. Li, B. Zhang, Z. Chen, Y. Su, Z. Xiao and C. Wang, "High-voltage thin layer SOI technology for negative power supply," 2012 24th International Symposium on Power Semiconductor Devices and ICs, pp. 201-204, 2012.
