曾正，重慶大學教授/博導，國家級青年人才，重慶市杰青、青拔，長期從事碳化硅功率器件封裝測試與應用研究，入選中國高被引學者、全球前2%科學家、第三代半導體卓越創新青年、電力優秀青年科技人才。2009年獲得武漢大學電氣工程學士學位，2014年獲得浙江大學電氣工程博士學位，隨即加入重慶大學，歷任講師（2014年）、副教授（2017年）、教授（2022年），2018-2019年在新加坡南洋理工大學從事博士后研究。主持國家級項目6項、省部級項目4項，以第一作者出版學術專著2、譯著1部，以第一/通信作者發表高水平論文55篇，獲得教育部自然科學一等獎，獲評重慶大學最受學生歡迎的老師。
教育經歷
2009-2014，浙江大學，電氣工程，博士
2005-2009，武漢大學，電氣工程及其自動化，學士
工作經歷
2022-至今，重慶大學，電氣工程學院，教授
2018-2019，新加坡南洋理工大學，電氣與電子工程學院，博士后
2017-2022，重慶大學，電氣工程學院，副教授
2014-2017，重慶大學，電氣工程學院，講師
代表成果
[1] 曾正. SiC功率器件的封裝測試與系統集成[M]. 北京: 科學出版社, 2020.
[2] 曾正, 趙榮祥, 楊歡. 柔性并網逆變器控制技術[M]. 北京: 科學出版社, 2020.
[3] Wang Yulei, Gong Jiakun, Zeng Zheng, Wang Liang, Zou Mingrui, Gong Yiming, Liang Yuxi. Flexible 1.5-GHz probe isolation extension with high CMRR and robust dv/dt immunity empowering next-generation WBG measurement[J]. IEEE Transactions on Power Electronics, 2025, 40(1): 862-878.
[4] Zeng Zheng, Zhang Xin, Blaabjerg Frede, Miao Linjing. Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes[J]. IEEE Transactions on Power Electronics, 2020, 35(2): 1866-1881.
[5] Zeng Zheng, Zhang Xin, Li Xiaoling. Layout-dominated dynamic current imbalance in multichip power module: Mechanism modeling and comparative evaluation[J]. IEEE Transactions on Power Electronics, 2019, 34(11): 11199-11214.
已培養博士、碩士12名，指導全國大學生電子設計競賽7項、大學生國(市)創新訓練計劃項目10余項、UC聯合學院Coop實習10余人。
科研項目
1、國家青年人才計劃項目，高壓碳化硅功率器件封裝集成，2023/9-2026/8，項目負責人
2、17*計劃技術領域基金項目，第三代半導體功率器件***，2022/10-2024/10，項目負責人
3、國家自然科學基金面上項目，高功率密度SiC逆變器的3D封裝與熱管理研究，2022/1-2025/12，項目負責人
4、國家自然科學基金青年項目，車用多芯片并聯SiC模塊電熱應力分布規律和調控方法研究，2017/1-2019/12，項目負責人
5、重慶市杰出青年科學基金項目，第三代半導體封裝測試，2024/7-2027/6，項目負責人
6、重慶市青年拔尖人才計劃項目，高壓大容量功率半導體器件，2022/1-2024/12，項目負責人
7、企業委托開發項目，光伏用低感低熱阻混合碳化硅功率模塊設計與研制，2023/6-2024/7，項目負責人
8、企業委托開發項目，新能源汽車氮化鎵電驅電源控制器技術研究，2022/7-2023/12，項目負責人
9、企業委托開發項目，車用多芯片并聯功率模塊電-熱優化設計研究，2023/5-2023/12，項目負責人
10、企業委托開發項目，單面散熱SiC功率模塊開發，2022/4-2022/11，項目負責人
11、企業委托開發項目，車用功率模塊的優化設計、封裝集成與原位測試研究、2021/9-2021/12，項目負責人
12、國家重點研發計劃，寬禁帶半導體電機控制器開發和產業化，2017/7-2021/6，子課題負責人
13、國家重點研發計劃，柔性直流輸電裝備壓接型定制化超大功率IGBT關鍵技術及應用，2016/6-2019/5，子課題負責人
科研成果
[25] Gong Jiakun, Wang Yulei, Wang Liang, Zou Mingrui, Sun Peng, Liang Yuxi, Gong Yiming, Zheng Huayang, Zeng Zheng. Overcurrent protection enabled by broadband Rogowski coil current sensor for medium voltage SiC MOSFET[J]. IEEE Transactions on Power Electronics, 2025, 40(PP): 1-1.
[24] Sun Peng, Pan Xiaofei, Zeng Zheng, Huang Yukai, Hu Yihua, Zou Mingrui. An overview of mechanical characterization for power module: Challenges, advances and future prospects[J]. IEEE Transactions on Power Electronics, 2025, 40(3): 4112-4130.
[23] Wang Yulei, Gong Jiakun, Zeng Zheng, Wang Liang, Zou Mingrui, Gong Yiming, Liang Yuxi. Flexible 1.5-GHz probe isolation extension with high CMRR and robust dv/dt immunity empowering next-generation WBG measurement[J]. IEEE Transactions on Power Electronics, 2025, 40(1): 862-878.
[22] Wang Yulei, Gong Jiakun, Zou Mingrui, Wang Liang, Gong Yiming, Jiang Chaoqiang, Zeng Zheng. Miniaturized current shunt with high bandwidth and low parasitics for high-integrated applications: Electro-thermal considerations and co-design[J]. IEEE Transactions on Power Electronics, 2024, 39(12): 15732-15747.
[21] Wang Liang, Zheng Huayang, Wang Yulei, Gong Jiakun, Hu Borong, Mu Wei, Li Jiayu, Long Teng, Zeng Zheng. Forced fluorinated liquid cooling for medium voltage SiC power modules: Concurrently addressing electrical and thermal challenges[J]. IEEE Transactions on Power Electronics, 2024, 39(12): 15622-15634.
[20] Sun Peng, Pan Xiaofei, Han Xudong, Zheng Huayang, Liang Yuxi, Hu Yihua, Niu Fuli, Zeng Zheng. Simultaneous mitigation of switching overvoltage and oscillation for SiC MOSFET via gate charge injection concept[J]. IEEE Transactions on Power Electronics, 2024, 39(11): 14376-14386.
[19] Wang Yulei, Gong Jiakun, Wang Liang, Zou Mingrui, Gong Yiming, Niu Fuli, Long Teng, Zeng Zheng. High-bandwidth differential voltage probe for accurate switching characterization of WBG devices[J]. IEEE Transactions on Power Electronics, 2024, 39(10): 12545-12557.
[18] Wang Liang, Gong Jiakun, Long Teng, Wang Yulei, Zheng Huayang, Hu Borong, Mu Wei, Zeng Zheng. A review of partial discharge in medium voltage SiC power modules under square wave excitation: Characterization, mitigation, and detection[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2024, 12(4): 3588-3606.
[17] Wang Liang, Gong Jiakun, Long Teng, Blaabjerg Frede, Hu Borong, Wang Yulei, Zeng Zheng. Direct metallization-based DBC-free power modules for near-junction water cooling: Analysis and experimental comparison[J]. IEEE Transactions on Power Electronics, 2024, 39(6): 7052-7063.
[16] Sun Peng, Zou Mingrui, Wang Yulei, Gong Jiakun, Liang Yuxi, Niu Fuli, Jiang Ke, Gao Wei, Zeng Zheng. Focuses and concerns of dynamic test for wide bandgap device: A questionnaire-based survey[J]. IEEE Transactions on Power Electronics, 2023, 38(12): 15522-15534.
[15] Wang Yulei, Long Teng, Zou Mingrui, Sun Peng, Gong Jiakun, Wang Liang, Shillaber Luke, Blaabjerg Frede, Jiang Ke, Zeng Zheng. Transmission line Rogowski coil: Isolated current sensor with bandwidth exceeding 3 GHz for wide-bandgap device[J]. IEEE Transactions on Power Electronics, 2023, 38(11): 13599-13605.
[14] Sun Peng, Zou Mingrui, Niu Fuli, Liang Yuxi, Gong Jiakun, Wang Yulei, Luo Ming, Song Junwei, Zeng Zheng. Dynamic deformation oriented thermo-mechanical performance assessment for automotive power module with various PWM schemes[J]. IEEE Transactions on Power Electronics, 2023, 38(9): 10906-10916.
[13] Sun Peng, Liang Yuxi, Wang Liang, Wang Yulei, Zou Mingrui, Zeng Zheng. In situ full-field deformation characterization of power module and FEA model calibration based on stereo digital image methodology[J]. IEEE Transactions on Power Electronics, 2023, 38(7): 8430-8441.
[12] Sun Peng, Niu Fuli, Zeng Zheng, Li Kaiyan, Ou Kaihong. FEA-dominant reliability and lifetime model of double-sided cooling SiC power module[J]. IEEE Transactions on Device and Materials Reliability, 2023, 23(2): 178-186.
[11] Wang Yulei, Zeng Zheng, Long Teng, Sun Peng, Wang Liang, Zou Mingrui. Impedance-matching shunt (IM-Shunt): Current sensor with ultra-high bandwidth and extremely-low parasitics for wide-bandgap device[J]. IEEE Transactions on Power Electronics, 2022, 37(10): 11528-11533.
[10] Wang Liang, Zeng Zheng, Sun Peng, Ai Shengxiang, Zhang Jiawei, Wang Yulei. Electric-field-dominated partial discharge in medium voltage SiC power module packaging: Model, mechanism, reshaping, and assessment[J]. IEEE Transactions on Power Electronics, 2022, 37(5): 5422-5432.
[9] Sun Peng, Zeng Zheng, Wang Liang, Wang Yulei, Han Xudong. Online deformation characterization for electrothermal-mechanical effect of power module via confocal methodology[J]. IEEE Transactions on Power Electronics, 2022, 37(2): 1195-1200.
[8] Wang Liang, Zeng Zheng, Sun Peng, Yu Yue, Ou Kaihong, Wang Jin. Current-bunch concept for parasitic-oriented extraction and optimization of multi-chip SiC power module[J]. IEEE Transactions on Power Electronics, 2021, 36(8): 8593-8599.
[7] Zeng Zheng, Wang Jin, Wang Liang, Yu Yue, Ou Kaihong. Inaccurate switching loss measurement of SiC MOSFET caused by probes: Modelization, characterization, and validation[J]. IEEE Transactions on Instrumentation and Measurement, 2021, 70, 1002014.
[6] Zeng Zheng, Ou Kaihong, Wang Liang, Yu Yue. Reliability-oriented automated design of double-sided cooling power module: A thermo-mechanical-coordinated and multi-objective-oriented optimization methodology[J]. IEEE Transactions on Device and Materials Reliability, 2020, 20(3): 584-595.
[5] Zeng Zheng, Zhang Xin, Blaabjerg Frede, Chen Hao, Sun Tianfu. Stepwise design methodology and heterogeneous integration routine of air-cooled SiC inverter for electric vehicle[J]. IEEE Transactions on Power Electronics, 2020, 35(4): 3973-3988.
[4] Zeng Zheng, Zhang Xin, Blaabjerg Frede, Miao Linjing. Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes[J]. IEEE Transactions on Power Electronics, 2020, 35(2): 1866-1881.
[3] Zeng Zheng, Zhang Xin, Zhang Zhe. Imbalance current analysis and its suppression methodology for parallel SiC MOSFETs with aid of a differential mode choke[J]. IEEE Transactions on Industrial Electronics, 2020, 67(2): 1508-1519.
[2] Zeng Zheng, Zhang Xin, Li Xiaoling. Layout-dominated dynamic current imbalance in multichip power module: Mechanism modeling and comparative evaluation[J]. IEEE Transactions on Power Electronics, 2019, 34(11): 11199-11214.
[1] Zeng Zheng, Li Xiaoling. Comparative study on multiple degrees of freedom of gate driver for transient behavior regulation of SiC MOSFET[J]. IEEE Transactions on Power Electronics, 2018, 33(10): 8754-8763.
學會兼職
1、中國電工技術學會，科技傳播與出版專業委員會，委員
2、中國電工技術學會，電工產品環境技術專業委員會，委員
3、中國機械工業教育協會，電力電子與電力傳動專業委員會，委員
期刊兼職
1、CSEE Journal of Power and Energy Systems，副編輯
2、中國電機工程學報，青年學科編輯
3、重慶大學學報，青年編委
